Bidirektionaler Thyristor mit Permanentem Kurzschluss-Fehlermodus, Modulare Mehrstufige Wandlerzelle und Verfahren zum Schutz des Wandlers
Anmelder: Hitachi Energy Ltd 🇨🇭
Details
- Veröffentlichungs-Nr.
- EP4819791
- Anmeldetag
- 2. April 2025
- Veröffentlichung
- 7. Oktober 2026
- Rechtsraum
- EP
Abstract
The invention relates a protection circuit (100) for protecting modular multilevel converter, MMC, cell, a MMC cell (1000) and a protection method. The protection circuit (100) comprises a bypass semiconductor device (1) with a first thyristor structure (10) and a second thyristor structure (20) connected in antiparallel. The first thyristor structure (10) comprises a first trigger region (61) and a first emitter region (71). The second thyristor structure (20) comprises a second trigger region (62) and a second emitter region (72). The disposition of the trigger regions (61, 62) and of the emitter regions (71, 72) being such that in response to a failure of the MMC cell, the first thyristor structure (10) fails to a permanent short circuit by a first gate pulse current between the first trigger region (61) and the first emitter region (71), while the second thyristor structure (20) fails to a permanent short circuit by a second gate pulse current between the second trigger region (62) and the second emitter region (72).
Anmelder
- Firma
- Hitachi Energy Ltd
- Land
- 🇨🇭 Schweiz
Unternehmen mit Sitz in der Schweiz, hervorgegangen aus dem japanischen Hitachi-Konzern und der früheren Energiesparte von ABB. Entwickelt Technik für Stromübertragung, -verteilung und Netzautomatisierung.
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