Speichervorrichtung mit Shunt-Bitleitungen oder Shunt-Flying-Bitleitungen
Anmelder: MediaTek Inc. 🇹🇼
Details
- Veröffentlichungs-Nr.
- EP4822697
- Anmeldetag
- 8. April 2026
- Veröffentlichung
- 14. Oktober 2026
- Rechtsraum
- EP
- IPC
- G11C7/18, G11C5/06
Abstract
A memory device (100) includes a memory array (102) and a plurality of bitlines (BL<sub>A</sub>, BL<sub>B</sub>, BLB<sub>A</sub>, BLB<sub>B</sub>). The bitlines (BL<sub>A</sub>, BL<sub>B</sub>, BLB<sub>A</sub>, BLB<sub>B</sub>) include a first bitline (BL<sub>A</sub>). The first bitline (BL<sub>4</sub>) includes a first bitline segment (108_1) and a second bitline segment (108_2). The first bitline segment (108_1) is routed on a first metal layer but not a second metal layer, and coupled to a plurality of first memory cells in the memory array (102), wherein the second metal layer is different from the first metal layer. The second bitline segment (108_2) is routed on the second metal layer but not the first metal layer, and coupled to the first memory cells through the first bitline segment. At least a portion of the first bitline segment (108_1) and at least a portion of the second bitline segment (108_2) are connected in a shunt configuration.
Anmelder
- Firma
- MediaTek Inc.
- Land
- 🇹🇼 Taiwan
Taiwanisches Unternehmen, das Halbleiter und Chipsätze für Smartphones, Fernseher, WLAN-Geräte und andere elektronische Produkte entwickelt und vertreibt.
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