Hemt mit Vertiefungen im Gate Stack und Verfahren zu Ihrer Herstellung

Details

Veröffentlichungs-Nr.

EP4823273

Anmeldetag

20. Oktober 2025

Veröffentlichung

14. Oktober 2026

Rechtsraum

EP

Abstract

The present disclosure provides a semiconductor structure, in particular a HEMT, and a method for manufacturing thereof, and the semiconductor structure includes a substrate (10), a III-Nitride channel layer (20) on the substrate and a barrier layer (30) on the channel layer; a P-type III-Nitride layer (40) in a gate region and on a side of the barrier layer away from the substrate; and a cap layer (50) on a side of the P-type III-Nitride layer away from the substrate; where a surface of the cap layer away from the substrate includes pits (51) which can change crystal planes from the C-crystal plane to the non-C crystal plane of the contact interface between the cap layer and a Schottky gate electrode (63).

Anmelder

Firma

Enkris Semiconductor, Inc

Land

🇨🇳 China