Ladungspumpenstufe und Verfahren zur Implementierung davon
Anmelder: NXP B.V. 🇳🇱
Details
- Veröffentlichungs-Nr.
- EP4826594
- Anmeldetag
- 18. April 2025
- Veröffentlichung
- 21. Oktober 2026
- Rechtsraum
- EP
- IPC
- G06K19/07
Abstract
In accordance with a first aspect of the present disclosure, there is provided a charge pump stage for use in a radio frequency identification (RFID) tag, the charge pump stage comprising: at least one bias generation unit, wherein said bias generation unit comprises a biasing source and a biasing element; and a regulation element coupled in series to the biasing source and the biasing element, wherein said regulation element is configured to regulate a current or voltage provided by the biasing source to the biasing element. In accordance with a second aspect of the present disclosure, there is conceived a corresponding method of implementing a charge pump stage for use in an RFID tag.
Anmelder
- Firma
- NXP B.V.
- Land
- 🇳🇱 Niederlande
Niederländischer Halbleiterhersteller mit Sitz in Eindhoven. Entwickelt Chips und Halbleiterlösungen für Automobiltechnik, Kommunikation, Sicherheit sowie industrielle Anwendungen.
7.985 Patente in unserer Datenbank