Ecr-Plasmaquelle und Verfahren zur Abscheidung eines Dotierten Dünnfilms auf einem Substrat

Details

Veröffentlichungs-Nr.

EP4826759

Anmeldetag

8. April 2026

Veröffentlichung

21. Oktober 2026

Rechtsraum

EP

IPC

H01J37/32, H01J37/34

Abstract

The present application relates to an ECR plasma source, comprising: a vacuum chamber; an injection device configured to inject a working gas into the vacuum chamber; an emission device configured to emit an electromagnetic wave into a plasma generation region; and a generation device, the generation device comprising: a magnetic field generator generating a static magnetic field in the plasma generation region, the static magnetic field coupling with the electromagnetic wave to ionize the working gas to generate plasma; a body and a cover plate, the body being configured to accommodate the magnetic field generator and the cover plate being configured to cover the body to seal the magnetic field generator relative to the plasma. The ECR plasma source further comprises: a metal target material disposed on an outer surface of at least a portion of the cover plate; a voltage source configured to apply a negative voltage to the cover plate to attract positive ions in the plasma to bombard the metal target material, such that metal atoms in the metal target material are sputtered; and a substrate holding device configured to hold and move a substrate such that a doped film is deposited on the substrate based on the plasma and the metal atoms when the substrate approaches the plasma generation region.

Anmelder

Firma

Robert Bosch GmbH

Land

🇩🇪 Deutschland

Fachgebiete