Zusammensetzung zur Halbleitersubstratreinigung, Verfahren zur Reinigung eines Halbleitersubstrats und Verfahren zur Herstellung eines Halbleitersubstrats
Anmelder: MITSUBISHI GAS CHEMICAL COMPANY, INC. 🇯🇵
Details
- Veröffentlichungs-Nr.
- EP4826761
- Anmeldetag
- 11. Dezember 2024
- Veröffentlichung
- 19. Juni 2025
- Rechtsraum
- EP
Abstract
The present invention is able to provide a composition for semiconductor substrate cleaning, the composition containing: a component (A) that is at least one substance which is selected from the group consisting of hydrofluoric acid, a salt of hydrofluoric acid, an acid that has an anion represented by general formula (a) as a conjugate base, and a salt of the acid that has an anion represented by general formula (a) as a conjugate base; a component (B) that is a compound represented by general formula (b); a component (C) that is an oxidant; a component (D) that is a tungsten corrosion inhibitor; a component (E) that is an organic solvent; and a component (F) that is water. The component (E) contains at least one substance that is selected from the group consisting of tetrahydrofuran, acetone, and acetonitrile, and α represented by formula (I) is 0.2 to 1.1 inclusive.
Anmelder
- Firma
- MITSUBISHI GAS CHEMICAL COMPANY, INC.
- Land
- 🇯🇵 Japan
Japanisches Chemieunternehmen der Mitsubishi-Gruppe mit Fokus auf technische Kunststoffe, Methanol und Spezialchemikalien. Der Konzern beliefert unter anderem die Elektronik- und Verpackungsindustrie.
2.586 Patente in unserer Datenbank