Verfahren zur Herstellung von 3D-Interconnectstrukturen mit Luftspalten und zugehöriges Bauelement

Details

Veröffentlichungs-Nr.

EP2408006

Aktenzeichen

EP11174114

Anmeldetag

15. Juli 2011

Veröffentlichung

3. Juli 2019

Erteilung

3. Juli 2019

Rechtsraum

EP

IPC

H01L21/768H01L23/48

Abstract

Ultra-low capacitance interconnect structures, preferably Through Silicon Via interconnects and methods for fabricating said interconnects are disclosed. The fabrication method comprises the steps of providing a substrate (1) having a first main surface (S1), producing at least one hollow trench-like structure (R1) therein from the first main surface (S1), said trench-like structure surrounding an inner pillar structure (22) of substrate material, depositing a dielectric liner (24) which pinches off said hollow trench-like structure (R1) at the first main surface (S1) such that an airgap is created in the center of hollow trench-like structure (R1) and further creating a TSV hole (23) and filling it at least partly with conductive material.

Anmelder

Firmen

IMEC VZW
IMEC

Land

🇧🇪 Belgien

Fachgebiete