Nitridhalbleiterlaserelement und Herstellungsverfahren dafür

Details

Veröffentlichungs-Nr.

EP2416460

Aktenzeichen

EP11176617

Anmeldetag

4. August 2011

Veröffentlichung

3. April 2019

Erteilung

3. April 2019

Rechtsraum

EP

IPC

H01S5/028H01S5/323

Abstract

A nitride semiconductor laser element has a ridge (24) formed on the top face (20) of a nitride semiconductor layer (20). Cavity planes (25a,25b) are formed at the ends of a waveguide region (26) provided beneath the ridge. Insulating film (30) is formed on the side faces of the ridge (24) an on the top face of the nitride semiconductor layer (20) such that its ends on the cavity plane side are spaced from cavity planes. End face protective films (70a,70b) made of AIGaN are formed on the cavity planes, a part of the upper face of the nitride semiconductor layer (20) and a part of the surface of insulating film (30), whereby a first region contacting the insulating film has a crystallinity different from a second region contacting semiconductor layer (20). Degradation of the cavity plane can be suppressed.

Anmelder

Firma

Nichia Corporation

Land

🇯🇵 Japan

Fachgebiete