Hochfrequenzschaltungsgehäuse und Hochfrequenzschaltung

Details

Veröffentlichungs-Nr.

EP2428989

Aktenzeichen

EP11169866

Anmeldetag

14. Juni 2011

Veröffentlichung

8. Mai 2019

Erteilung

8. Mai 2019

Rechtsraum

EP

IPC

H01L23/057H01L23/66H01L23/498H01P1/04H01P5/02H01P3/00

Abstract

A high-frequency circuit package including a dielectric substrate (10); a signal line (31), a first ground conductor layer (32), a second ground conductor layer (33), and a frame-shaped dielectric layer (16) formed on the dielectric substrate; a fourth ground conductor layer (35) formed on the frame-shaped dielectric layer; a first recess (29) formed in the frame-shaped dielectric layer and including a first (29b) surface and a second surface (29c) that are located above the first ground conductor layer (32) and the second ground conductor layer (33) and extend laterally at an oblique angle with respect to the length direction of the signal line; a first ground line (38a) formed on the first surface and electrically connecting the second ground conductor layer (33) with the fourth ground conductor layer (35); and a second ground line (38b) formed on the second surface and electrically connecting the third ground conductor layer (34) with the fourth ground conductor layer (35).

Anmelder

Firma

Fujitsu Limited

Land

🇯🇵 Japan

Fachgebiete