Substratverarbeitungsverfahren

Details

Veröffentlichungs-Nr.

EP2469582

Aktenzeichen

EP11010198

Anmeldetag

22. Dezember 2011

Veröffentlichung

14. Februar 2018

Erteilung

14. Februar 2018

Rechtsraum

EP

IPC

H01L21/3213H01J37/32C23F4/00

Abstract

There is provided a substrate processing method capable of increasing an etching rate of a copper member without using a halogen gas. A Cu layer 40 having a smoothened surface 50 is obtained, and then, a processing gas produced by adding a methane gas to a hydrogen gas is introduced into an inner space of a processing chamber 15. Plasma is generated from this processing gas. In the inner space of the processing chamber 15, there exist oxygen radicals 52 generated when an oxide layer 42 is etched, and carbon radicals 53 generated from methane. The oxygen radicals 52 and the carbon radicals 53 are compounded to generate an organic acid, and the organic acid makes a reaction with copper atoms of the Cu layer 40. As a result, a complex of the organic acid having the copper atoms is generated, and the generated organic acid complex is vaporized.

Anmelder

Firma

Tokyo Electron Limited

Land

🇯🇵 Japan

Fachgebiete