Halbleiterverpackung mit reduziertem Ein-Widerstand und Obermetall-Ausbreitungswiderstand mit Anwendung auf die Leistungstransistorverpackung

Details

Veröffentlichungs-Nr.

EP2475004

Aktenzeichen

EP11189847

Anmeldetag

18. November 2011

Veröffentlichung

6. Juli 2016

Rechtsraum

EP

IPC

H01L23/482H01L23/00// H01L23/492

Abstract

Some exemplary embodiments of a semiconductor package including a semiconductor device having electrodes on opposite major surfaces connectable to a planar support surface without a bondwire and a control electrode disposed in a corner position for reducing top-metal spreading resistance and device on-resistance have been disclosed. One exemplary structure comprises a semiconductor device having a first major surface including a first electrode and a second major surface including a second electrode and a control electrode, wherein the control electrode is disposed in a corner of the second major surface, and wherein the first electrode, the second electrode, and the control electrode are electrically connectable to a planar support surface without a bondwire. The pads of the device may be arranged in a balanced grid to maintain device stability during integration. A minimum gap distance between die pads allows the placement of vias in the planar support surface.

Anmelder

Firma

International Rectifier Corporation

Land

🇺🇸 USA

Fachgebiete