ESD-Schutzschaltung
Anmelder: NXP B.V. 🇳🇱
Details
- Veröffentlichungs-Nr.
- EP2475008
- Aktenzeichen
- EP12150305
- Anmeldetag
- 5. Januar 2012
- Veröffentlichung
- 6. August 2014
- Erteilung
- 6. August 2014
- Rechtsraum
- EP
- IPC
- H01L27/02
Abstract
An integrated circuit device provides electrostatic discharge (ESD) protection. In connection with various example embodiments, an ESD protection circuit includes a diode-type circuit having a p-n junction that exhibits a low breakdown voltage. Connected in series with the diode between an internal node susceptible to an ESD pulse and ground, are regions of opposite polarity having junctions therebetween for mitigating the passage of leakage current via voltage sharing with the diode's junction. Upon reaching the breakdown voltage, the diode shunts current to ground via another substrate region, bypassing one or more junctions of the regions of opposite polarity and facilitating a low clamping voltage.
Anmelder
- Firma
- NXP B.V.
- Land
- 🇳🇱 Niederlande
Niederländischer Halbleiterhersteller mit Sitz in Eindhoven. Entwickelt Chips und Halbleiterlösungen für Automobiltechnik, Kommunikation, Sicherheit sowie industrielle Anwendungen.
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