Lichtemittierendes Nitridhalbleiter-Element und Herstellungsverfahren dafür

Details

Veröffentlichungs-Nr.

EP2518784

Aktenzeichen

EP12165914

Anmeldetag

27. April 2012

Veröffentlichung

21. Februar 2018

Erteilung

21. Februar 2018

Rechtsraum

EP

IPC

H01L33/38H01L33/40// H01L33/44

Abstract

To provide a reliable nitride semiconductor light emitting element having a thick metal bump and a method of manufacturing the nitride semiconductor light emitting element with an improved productivity, the manufacturing method of a flip-chip nitride semiconductor light emitting element including: a nitride semiconductor light emitting element structure having an n-type nitride semiconductor layer and a p-type nitride semiconductor layer, which are laminated on a substrate, and an n-side electrode connecting surface for connecting an n-side electrode to the n-type nitride semiconductor layer and a p-side electrode connecting surface for connecting a p-side electrode to the p-type nitride semiconductor layer on the same plane side of the substrate, the n-side electrode being connected to the n-side electrode connecting surface and the p-side electrode being connected to the p-side electrode connecting surface; and metal bumps formed on the n-side electrode and the p-side electrode, wherein a protective layer forming step, a first resist pattern forming step, a protective layer etching step, a first metal layer forming step, a second resist pattern forming step, a second metal layer forming step and a resist pattern removing step are sequentially performed.

Anmelder

Firma

Nichia Corporation

Land

🇯🇵 Japan

Fachgebiete