Gehäuse eines auf einer Kaskodenschaltung mit einem III-Nitrid-Bauelement basierenden Hochspannung-Gleichrichters mit gestanztem Leiterrahmen

Details

Veröffentlichungs-Nr.

EP2521171

Aktenzeichen

EP12163617

Anmeldetag

10. April 2012

Veröffentlichung

6. März 2019

Erteilung

6. März 2019

Rechtsraum

EP

IPC

H01L23/495H03K17/567H03K17/687H03K17/74// H01L25/18

Abstract

Some exemplary embodiments of high voltage cascoded III-nitride semiconductor package with a stamped leadframe have been disclosed. One exemplary embodiment comprises a III-nitride transistor (230) having a cathode of a diode (220) stacked atop a source of the III-nitride transistor, and a stamped leadframe comprising a first bent lead (212b) coupled to a gate of the III-nitride transistor and the anode of the diode, and a second bent lead (212a) coupled to a drain of the III-nitride transistor. The bent leads expose respective flat portions that are surface mountable. In this manner, reduced package footprint, improved surge current capability, and higher performance may be achieved compared to conventional wire bonded packages. Furthermore, since multiple packages may be assembled at a time, high integration and cost savings may be achieved compared to conventional methods requiring individual package processing and externally sourced parts.

Anmelder

Firmen

Infineon Technologies Americas Corp.
International Rectifier Corporation

Land

🇺🇸 USA

Fachgebiete