Gehäuse eines auf einer Kaskodenschaltung mit einem III-Nitrid-Bauelement basierenden Hochspannung-Gleichrichters, welches Gehäuse leitfähige Bügel zwischen Bauelementen-Elektroden und der Oberfläche eines Trägers aufweist

Details

Veröffentlichungs-Nr.

EP2521176

Aktenzeichen

EP12163619

Anmeldetag

10. April 2012

Veröffentlichung

11. Juni 2014

Erteilung

11. Juni 2014

Rechtsraum

EP

IPC

H01L25/18H01L23/495H03K17/567H03K17/687H03K17/74

Abstract

Some exemplary embodiments of high voltage cascoded III-nitride semiconductor package utilizing clips on a package support surface have been disclosed. One exemplary embodiment comprises a III-nitride transistor (230) attached to a package support surface (260) and having an anode of a diode (220) stacked over a source of the III-nitride transistor, a first conductive clip (212b) coupled to a gate of the III-nitride transistor and the anode of the diode, and a second conductive clip (212a) coupled to a drain of the III-nitride transistor. The conductive clips are connected to the package support surface and expose respective flat (214b,214a) portions that are surface mountable. In this manner, reduced package footprint, improved surge current capability, and higher performance may be achieved compared to conventional wire bonded packages. Furthermore, since a low cost printed circuit board (PCB) may be utilized for the package support surface, expensive leadless fabrication processes may be avoided for cost effective manufacturing.

Anmelder

Firma

International Rectifier Corporation

Land

🇺🇸 USA

Fachgebiete