Verfahren zur Charakterisierung einer LED-Vorrichtung
Anmelder: NXP B.V. 🇳🇱
Details
- Veröffentlichungs-Nr.
- EP2523008
- Aktenzeichen
- EP11165352
- Anmeldetag
- 9. Mai 2011
- Veröffentlichung
- 22. Juli 2015
- Erteilung
- 22. Juli 2015
- Rechtsraum
- EP
- IPC
- G01R31/26H05B33/08
Abstract
A method of characterising an LED is disclosed, based on a so-called characteristic resistance, in which the LED is operated at a first, relatively low, operating current and then at a second, relatively high, operating current. From the ratio between the difference between the forward voltages at these two operating currents, and the difference between the operating current, the characteristic resistance is determined. The characteristic resistance is measured at two or more moments during the operational lifetime of the device, and a prediction or estimate is made in relation to the total operational lifetime of the devices, from the evolution or change of the characteristic resistance. An integrated circuit configured to operate such a process is also disclosed.
Anmelder
- Firma
- NXP B.V.
- Land
- 🇳🇱 Niederlande
Niederländischer Halbleiterhersteller mit Sitz in Eindhoven. Entwickelt Chips und Halbleiterlösungen für Automobiltechnik, Kommunikation, Sicherheit sowie industrielle Anwendungen.
7.918 Patente in unserer Datenbank