Lichtemittierendes Halbleiterbauelemnt

Details

Veröffentlichungs-Nr.

EP2535952

Aktenzeichen

EP12156610

Anmeldetag

22. Februar 2012

Veröffentlichung

6. November 2019

Erteilung

6. November 2019

Rechtsraum

EP

IPC

H01L33/00H01L33/06H01S5/343// F21S13/00G02F1/13357H01L33/32H01L33/48

Abstract

Disclosed is a light emitting device including a first conductive type semiconductor layer; a second conductive type semiconductor layer disposed on the first conductive type semiconductor layer; and an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, the active layer comprising quantum well layers and quantum barrier layers, wherein each of the quantum well barrier layers comprises first barrier layers and a second barrier layer disposed between the first barrier layers, and an energy bandgaps of the second barrier layer is larger than energy bandgaps of the quantum well layers and smaller than energy bandgaps of the first barrier layers.

Anmelder

Firmen

LG Innotek Co., Ltd.
Industry-University Cooperation Foundation Hanyang University ERICA Campus

Land

🇰🇷 Südkorea

Fachgebiete