Gestapeltes Halbbrückenleistungsmodul

Details

Veröffentlichungs-Nr.

EP2546874

Aktenzeichen

EP12173355

Anmeldetag

25. Juni 2012

Veröffentlichung

4. März 2020

Erteilung

4. März 2020

Rechtsraum

EP

IPC

H01L25/07H05K7/20

Abstract

According to an exemplary embodiment, a stacked half-bridge power module includes a high side device having a high side power terminal coupled to a high side substrate and a low side device having a low side power terminal coupled to a low side substrate. The high side and low side devices are stacked on opposite sides of a common conductive interface. The common conductive interface electrically, mechanically, and thermally couples a high side output terminal of the high side device to a low side output terminal of the low side device. The high side device and the low side device can each include an insulated-gate bipolar transistor (IGBT) in parallel with a diode.

Anmelder

Firmen

Infineon Technologies Americas Corp.
International Rectifier Corporation

Land

🇺🇸 USA

Fachgebiete