Verfahren zur Herstellung eines optischen Deflektors durch Ausbildung einer Schneidstraße mit Doppelätzung

Details

Veröffentlichungs-Nr.

EP2574974

Aktenzeichen

EP12006663

Anmeldetag

21. September 2012

Veröffentlichung

12. April 2017

Erteilung

12. April 2017

Rechtsraum

EP

IPC

G02B26/10G02B26/08B81C1/00H01L21/683

Abstract

A wafer-level optical deflector assembly (406¼ 413) is formed on a front surface side of a wafer (401¼ 404). Then, the front surface side of the wafer is etched by using elements of the wafer-level optical deflector assembly, to form a front-side dicing street (Y1). Then, a transparent substrate (501) with an inside cavity (501a) is adhered to the front surface side of the wafer. Then, a second etching mask (405) is formed on a back surface side of the wafer. Then, the back surface side of the wafer is etched to create a back-side dicing street (Y2). Then, an adhesive sheet (505) with a ring-shaped rim (506) is adhered to the back surface side of the wafer. Then, the transparent substrate is removed. Finally, the ring-shaped rim is expanded to widen the front-side dicing street and the back-side dicing street to pick up optical deflectors one by one from the wafer.

Anmelder

Firma

STANLEY ELECTRIC CO., LTD.

Land

🇯🇵 Japan

Fachgebiete