Halbleiterbauelement

Details

Veröffentlichungs-Nr.

EP2581939

Aktenzeichen

EP12187970

Anmeldetag

10. Oktober 2012

Veröffentlichung

11. März 2020

Erteilung

11. März 2020

Rechtsraum

EP

IPC

H01L29/08H01L29/16H01L29/739

Abstract

A semiconductor device includes a semiconductor layer of a first conductor type; a first semiconductor layer of a second conductor type, on the front of the semiconductor layer; a second semiconductor layer of the second conductor type, on the first semiconductor layer and having a higher impurity concentration than the first semiconductor layer; a third semiconductor layer of the second conductor type, on the second semiconductor layer and having a lower impurity concentration than the second semiconductor layer; a first semiconductor region of the first conductor type, in a surface layer of the third semiconductor layer; a second semiconductor region of the second conductor type, in a surface layer of the first semiconductor region; an input electrode contacting the second semiconductor region; a control electrode disposed above part of the first semiconductor region with an insulating film therebetween; and an output electrode disposed on the back of the semiconductor layer.

Anmelder

Firmen

Fuji Electric Co., Ltd.
Sugawara, Yoshitaka

Land

🇯🇵 Japan

Fachgebiete