Verfahren zur Herstellung eines Siliciumeinzelkristallsubstrats

Details

Veröffentlichungs-Nr.

EP2607526

Aktenzeichen

EP12196921

Anmeldetag

13. Dezember 2012

Veröffentlichung

23. April 2014

Erteilung

23. April 2014

Rechtsraum

EP

IPC

C30B15/04C30B29/06C30B33/02C30B15/20

Abstract

To provide a silicon single crystal substrate having uniform resistance in the substrate, less BMDs in a surface layer of the substrate, and moderate BMDs in a center of thickness of the substrate. A silicon single crystal substrate is formed by slicing a silicon single crystal grown with a Czochralski method, the substrate having the following characteristics. The resistivity in a center of a first main surface of the silicon single crystal substrate is not lower than 50 ©¢cm and a rate of change in resistivity in the first main surface is not higher than 3%. The average density of oxygen precipitates bulk micro defects in a region lying between the first main surface and a plane at a depth of 50 µm is lower than 1 × 10 8 /cm 3 . The average density of oxygen precipitates bulk micro defects in a region lying between a plane at a depth of 300 µm and a plane at a depth of 400 µm from the first main surface is not lower than 1 × 10 8 /cm 3 and not higher than 1 × 10 9 /cm 3 .

Anmelder

Firma

Siltronic AG

Land

🇩🇪 Deutschland

Fachgebiete