Tunnel-Feldeffekt-Transistor und Verfahren zur Herstellung davon

Details

Veröffentlichungs-Nr.

EP2608263

Aktenzeichen

EP12198391

Anmeldetag

20. Dezember 2012

Veröffentlichung

23. April 2014

Rechtsraum

EP

IPC

H01L29/739H01L29/08H01L29/36H01L29/04H01L29/06H01L29/10H01L21/33

Abstract

A tunnel Field Effect Transistor (1) is disclosed comprising an interface (4) between a source (2) and a channel (3), the source side of this interface being a layer (5) of a first crystalline semiconductor material (7) being substantially uniformly doped with a metal to the solubility level of the metal in the first crystalline material (7) and the channel side of this interface (4) being a layer (6) of this first crystalline semiconductor material (7) doped with this metal, the concentration decreasing with increasing distance from the interface (4).

Anmelder

Firmen

IMEC VZW
IMEC

Land

🇧🇪 Belgien

Fachgebiete