Dünnfilmtransistor, Herstellungsverfahren dafür und Anzeigevorrichtung damit

Details

Veröffentlichungs-Nr.

EP2613346

Aktenzeichen

EP12778033

Anmeldetag

19. September 2012

Veröffentlichung

8. Juni 2022

Erteilung

8. Juni 2022

Rechtsraum

EP

IPC

H01L21/336H01L29/786H01L29/51H01L21/28H01L29/49

Abstract

Embodiments of the present invention provide a thin film transistor, a manufacturing method thereof and a display device. The method for manufacturing the thin film transistor, comprising the following steps: providing a substrate; forming a semiconductor layer on the substrate; forming a gate insulating layer; and forming a gate electrode, wherein the gate insulating layer comprises a first gate insulating layer, the first gate insulating layer being formed by oxidizing a portion of the semiconductor layer, and the unoxidized portion of the semiconductor layer forming an active layer, and wherein the gate electrode is formed in such a way that the gate insulating layer is sandwiched between the gate electrode and the active layer.

Anmelder

Firmen

BOE Technology Group Co., Ltd.
Boe Technology Group Co. Ltd.

Land

🇨🇳 China

Fachgebiete