Maskenstruktur und Verfahren für defektfreie heteroepitaktische Abscheidung

Details

Veröffentlichungs-Nr.

EP2629320

Aktenzeichen

EP13155361

Anmeldetag

15. Februar 2013

Veröffentlichung

17. Oktober 2018

Erteilung

17. Oktober 2018

Rechtsraum

EP

IPC

H01L21/20H01L21/02H01L23/04H01L25/04H01L29/66C30B19/00C30B23/04C30B25/04C30B29/40

Abstract

The invention is related to a mask structure suitable for producing a defect free epitaxially grown structure of a crystalline material on substrate of another crystalline material, the two materials having difference lattice constants. The mask comprises two levels : a first level comprising a first layer provided with a first opening, for example of first trench, the bottom of which is formed by the substrate formed of the first material. The second level comprises at least a barrier placed on at least two opposite sides of the trench. According to a preferred embodiment, the second level comprises one or more second trenches arranged perpendicularly to the first trench. The depth and width of the first and second trenches is such that defects generated in the epitaxially grown layer of the second material at the substrate portion at the bottom of the first trench, and propagating in the direction of the second trenches are trapped in the first trench. In this way, in the larger portion of the second trenches, essentially defect free material can be grown.

Anmelder

Firmen

IMEC VZW
IMEC

Land

🇧🇪 Belgien

Fachgebiete