Herstellungsverfahren für eine Feldeffekt-Halbleitervorrichtung

Details

Veröffentlichungs-Nr.

EP2696369

Aktenzeichen

EP12180025

Anmeldetag

10. August 2012

Veröffentlichung

13. Januar 2021

Erteilung

13. Januar 2021

Rechtsraum

EP

IPC

H01L29/778H01L21/336H01L29/10H01L21/28// H01L29/165

Abstract

A method is disclosed for manufacturing a FET transistor device comprising a germanium channel layer, the method comprising: - providing a gate structure on the germanium channel layer, the gate structure comprising a silicon or SiGe layer, the gate structure being delimited laterally by sidewalls and the silicon or SiGe layer laterally abutting on the sidewalls at a certain height level of the gate structure; - subjecting the germanium channel layer and the gate structure to a solution adapted for forming a silicon oxide on the sidewalls at a level of the silicon or SiGe layer and for removing any germanium oxide formed on the germanium channel layer; - providing elevated source/drain structures on the germanium channel layer adjacent to the dummy structure by selectively epitaxially growing source/drain material on the germanium channel layer.

Anmelder

Firmen

IMEC VZW
IMEC

Land

🇧🇪 Belgien

Fachgebiete