Dünnfilm-Transistorsubstrat und Verfahren zur Herstellung davon

Details

Veröffentlichungs-Nr.

EP2696370

Aktenzeichen

EP13153783

Anmeldetag

4. Februar 2013

Veröffentlichung

12. Dezember 2018

Erteilung

12. Dezember 2018

Rechtsraum

EP

IPC

H01L21/28H01L27/12H01L29/786H01L29/66

Abstract

A thin film transistor substrate includes a base substrate, an active pattern disposed on the base substrate, a gate insulation pattern disposed on the active pattern, a gate electrode disposed on the gate insulation pattern and overlapping the channel, and a light-blocking pattern disposed between the base substrate and the active pattern and having a size greater than the active pattern. The active pattern includes a source electrode, a drain electrode, and a channel disposed between the source electrode and the drain electrode.

Anmelder

Firma

Samsung Display Co., Ltd.

Land

🇰🇷 Südkorea

Fachgebiete