Photoelektrische Vorrichtung und Herstellungsverfahren

Details

Veröffentlichungs-Nr.

EP2731146

Aktenzeichen

EP13183814

Anmeldetag

10. September 2013

Veröffentlichung

11. April 2018

Erteilung

11. April 2018

Rechtsraum

EP

IPC

H01L31/0224H01L31/068H01L31/18H01L31/028H01L31/0236

Abstract

Provided are a photoelectric device and a method of manufacturing the photoelectric device. The photoelectric device includes: a semiconductor substrate that is formed of monocrystalline silicon and has first and second surfaces that are opposite to each other; a doping unit formed in the first surface of the semiconductor substrate; and an insulating layer that is formed between the doping unit and the second surface of the semiconductor substrate, wherein the doping unit includes: a first semiconductor layer including a first dopant doped in the monocrystalline silicon; and a second semiconductor layer including a second dopant doped in the monocrystalline silicon. Accordingly, carrier recombination loss due to defects of the semiconductor substrate may be reduced, and an open-circuit voltage may be increased. Also, as an emitter and a base that separate and collect carriers are formed of monocrystalline silicon like the semiconductor substrate, carrier collecting efficiency and photoelectric conversion efficiency may be improved.

Anmelder

Firmen

Intellectual Keystone Technology LLC
Samsung SDI Co., Ltd.

Land

🇺🇸 USA

Fachgebiete