Marks & Clerk LLP

A liquid discharge apparatus (10) is provided that includes a liquid discharge head (20) including a plurality of nozzle rows and a control means (30). The control means (30) is configured to discharge a droplet having a first volume from the plurality of nozzle rows to form an image on a recording medium and, when a linear defect is observed in the image, control to discharge a droplet having a second volume larger than the first volume at different time intervals from a nozzle of a first nozzle row that has caused the linear defect or a nozzle of a second nozzle row adjacent to the first nozzle row.

According to one embodiment, a control circuit (24) executes a read operation of simultaneously selecting two adjacent word lines (WL(n+1), WL(n-1)) adjacent to a read target word line (WL(n)) using a first voltage for determining whether or not threshold voltages of two adjacent memory cells connected respectively to the two adjacent word lines (WL(n+1), WL(n-1)) are threshold voltages of a first state or lower. Based on the result of the read operation, the control circuit (24) selects one date among data which is read from a memory cell of the read target word line (WL(n)) using first read voltages and data which is read from the memory cell of the read target word line (WL(n)) using second read voltages that are respectively lower than the first read voltages.

An electronic device includes: a display panel having a first area, and a second area having a higher transmittance than that of the first area, the display panel including a display layer, and a sensor layer on the display layer; and an electronic module under the display panel to overlap with the second area. The sensor layer includes: a plurality of first electrodes along a first direction; a plurality of second electrodes along a second direction crossing the first direction; a plurality of third electrodes along the first direction, and overlapping with the plurality of first electrodes; and a plurality of fourth electrodes along the second direction, and overlapping with the plurality of second electrodes. In the second area, a third electrode among the plurality of third electrodes and a fourth electrode among the plurality of fourth electrodes are insulated from each other and cross each other.

A semiconductor device of embodiments includes a first electrode, a second electrode, an oxide semiconductor layer provided between the first electrode and the second electrode, a gate electrode surrounding the oxide semiconductor layer, and a gate insulating layer. The gate electrode includes a first layer containing a first material having a first work function, a second layer provided on the first electrode side with respect to the first layer and containing a second material having a second work function, and a third layer provided on the second electrode side with respect to the first layer and containing a third material having a third work function. When the first conductive type is n-type, the second work function is smaller than the first work function, and the third work function is smaller than the first work function.

A semiconductor structure includes an epitaxial layer on a substrate and a doped region extending from the top surface of the epitaxial layer into the epitaxial layer. A gate structure extends from the top surface of the doped region into the epitaxial layer. The gate structure includes a first polysilicon structure, a gate oxide layer surrounding the first polysilicon structure, a second polysilicon structure over the first polysilicon structure and the gate oxide layer, and an insulating layer, which separates the first polysilicon structure and the gate oxide layer from the second polysilicon structure and surrounds the second polysilicon structure, and extends between the top surface of the epitaxial layer and a diode string disposed over the epitaxial layer. A source structure adjoins the doped region and the second polysilicon structure, and is electrically coupled to the diode string. A method of manufacturing the semiconductor structure is also provided.

A cap assembly for a rechargeable battery includes a upper cap. A vent plate is positioned below the upper cap. A curable component-containing structure is positioned between the upper cap and the vent plate.

A transfer device includes: a transfer hand configured to transfer a semiconductor wafer; a guide connected to the transfer hand and configured to support the semiconductor wafer; and a component provided under the guide and adjustable of a height of a contact point between the guide and the semiconductor wafer according to a warp shape of the semiconductor wafer.

A semiconductor structure includes an epitaxial layer on a substrate, a first lightly doped layer on the epitaxial layer, a second lightly doped layer on the first lightly doped layer, a heavily doped layer on the first lightly doped layer, a metal silicide layer on the second lightly doped layer and the heavily doped layer, and a gate structure, which extends from a top surface of the metal silicide layer toward the substrate, through the second lightly doped layer, the heavily doped layer and the first lightly doped layer, and into the epitaxial layer. A doping concentration of the second lightly doped layer at an interface between the second lightly doped layer and the metal silicide layer is less than a doping concentration of the heavily doped layer and greater than a doping concentration of the first lightly doped layer. A method of manufacturing the semiconductor structure is also provided.

An assistance control apparatus (3) includes: a mental state data generation unit (63) that generates mental state data indicating a mental state of a user, the mental state data being generated from physical state data indicating a physical state obtained based on sensing on a body of the user; and controls a control object in a space for communication of the user based on the mental state data of the user.

A method of manufacturing a semiconductor device includes the steps of: stacking a first layer mainly composed of silicon and including germanium and oxygen on a first wafer; forming a first element and a first bonding electrode in the first wafer; forming a second element and a second bonding electrode in a second wafer; bonding the first wafer and the second wafer via the first bonding electrode and the second bonding electrode; and transmitting a laser light through a first substrate to irradiate the first layer with the laser light, and thereby induce cleavage in the first layer.