III-Nitrid-Transistor mit einer mit dem Source verbundenen wärmeableitenden Platte und Verfahren zur Herstellung des Transistors

Details

Veröffentlichungs-Nr.

EP2741324

Aktenzeichen

EP12196215

Anmeldetag

10. Dezember 2012

Veröffentlichung

31. Oktober 2018

Erteilung

31. Oktober 2018

Rechtsraum

EP

IPC

H01L23/482H01L29/66H01L29/778H01L29/417// H01L29/02

Abstract

The present invention is related to a III-nitride transistor device comprising a III-nitride stack comprising at least two layers (7, 8) with a heterojunction therebetween, so as to form a 2DEG layer (10) in a channel formed in one of said two layers, and further comprising on said III-nitride stack source (4), gate (6) and drain (5) electrodes embedded in an insulation layer (3) which is attached to a carrier substrate (1). In the production process of a device of the invention, the III-nitride stack and the electrodes are produced on a temporary substrate, which is completely removed after the attachment to the carrier. A transistor according to the invention comprises a source-connected heat spreading plate (12) on the backside of the III-nitride stack, applied thereto after the removal of the temporary substrate, the source-connected heat spreading plate being connected to the source electrode. In a preferred embodiment, the device is a high power transistor comprising multiple finger-shaped source and drain electrodes extending from laterally placed source and drain pads. The backside metallization of the source pad is uniform with the source-connected heat spreading plates, the latter being preferably applied to said backside together with said metallization in a single process step.

Anmelder

Firmen

IMEC VZW
IMEC

Land

🇧🇪 Belgien

Fachgebiete