Feldeffekttransistor mit Halbleiterheterostruktur und Verfahren zu seiner Herstellung

Details

Veröffentlichungs-Nr.

EP2741337

Aktenzeichen

EP13155745

Anmeldetag

19. Februar 2013

Veröffentlichung

11. April 2018

Erteilung

11. April 2018

Rechtsraum

EP

IPC

H01L29/778H01L21/336H01L29/06// H01L29/205

Abstract

A heterostructure field effect transistor is disclosed comprising a semiconductor wire 2 comprising in its longitudinal direction L a source 1001 and a drain 1003 region, a channel region 1002 in between the source 1001 and drain 1003 region and in its transversal direction T for the source region 1001, a source core region 101 and a source shell region 201 disposed around the source core region 101, the source shell region having a thickness t<1>and in its transversal direction T for the drain region 1003, a drain core region 103 and a drain shell region 203 disposed around the drain core region 103, the drain shell region having a thickness t<3>and in its transversal direction T for the channel region 1002, a channel core region 102 and a channel shell region 202 disposed around the channel core region 102; the channel shell region having a thickness (t<2>); wherein the thickness t<2>of the channel shell region 202 is smaller than the thickness t<1>of the source shell region 201 and is smaller than the thickness t<3>of the drain shell region 203.

Anmelder

Firmen

IMEC VZW
IMEC

Land

🇧🇪 Belgien

Fachgebiete