Halbleiterlaserelement

Details

Veröffentlichungs-Nr.

EP2741381

Aktenzeichen

EP13195043

Anmeldetag

29. November 2013

Veröffentlichung

6. Mai 2020

Erteilung

6. Mai 2020

Rechtsraum

EP

IPC

H01S5/22H01S5/32// H01S5/042H01S5/20H01S5/343

Abstract

A semiconductor laser element includes: a light emitting layer (3) of a nitride semiconductor that is placed above a substrate (1) of GaN or AlGaN and has a refractive index higher than the substrate, wherein the semiconductor laser element further includes the following layers between the substrate and the light emitting layer in an order from the substrate: a first nitride semiconductor layer (21) of AlGaN; a second nitride semiconductor layer (22) of AlGaN having an Al ratio higher than the first nitride semiconductor layer; a third nitride semiconductor layer (23) of an InGaN; and a fourth nitride semiconductor layer (24) of AlGaN having an Al ratio higher than the first nitride semiconductor layer and having a thickness greater than the second nitride semiconductor layer. The refractive index profile of the waveguide and cladding layers is chosen in order to prevent laser light leaking into the substrate (1) and thereby deteriorating the far field pattern by having a ripple.

Anmelder

Firma

Nichia Corporation

Land

🇯🇵 Japan

Fachgebiete