Stromüberlagerungsstruktur und Herstellungsverfahren dafür

Details

Veröffentlichungs-Nr.

EP2779231

Aktenzeichen

EP14159901

Anmeldetag

14. März 2014

Veröffentlichung

25. November 2020

Erteilung

25. November 2020

Rechtsraum

EP

IPC

H01L23/433H01L23/538H01L23/00H01L23/495

Abstract

A semiconductor device module (113) includes a dielectric layer (48), a semiconductor device (44) having a first surface (39) coupled to the dielectric layer (48), and a conducting shim (45) having a first surface (41) coupled to the dielectric layer (48). The semiconductor device (44) also includes an electrically conductive heatspreader (60) having a first surface coupled to a second surface (47) of the semiconductor device (44) and a second surface (49) of the conducting shim (45). A metallization layer (54) is coupled to the first surface (39) of the semiconductor device (44) and the first surface (41) of the conducting shim (45). The metallization layer (47) extends through the dielectric layer (48) and is electrically connected to the second surface (47) of the semiconductor device (44) by way of the conducting shim (45) and the heatspreader (60).

Anmelder

Firma

General Electric Company

Land

🇺🇸 USA

Fachgebiete