Optoelektrische Vorrichtungen mit Hybrid-metamorphen Pufferschichten

Details

Veröffentlichungs-Nr.

EP2790234

Aktenzeichen

EP14158940

Anmeldetag

11. März 2014

Veröffentlichung

30. Dezember 2020

Erteilung

30. Dezember 2020

Rechtsraum

EP

IPC

H01L31/0687H01L31/0304H01L31/18

Abstract

In one aspect, semiconductor structures are described herein. A semiconductor structure, in some implementations, comprises a first semiconductor layer having a first bandgap and a first lattice constant and a second semiconductor layer having a second bandgap and a second lattice constant. The second lattice constant is lower than the first lattice constant. Additionally, a transparent metamorphic buffer layer is disposed between the first semiconductor layer and the second semiconductor layer. The buffer layer has a constant or substantially constant bandgap and a varying lattice constant. The varying lattice constant is matched to the first lattice constant adjacent the first semiconductor layer and matched to the second lattice constant adjacent the second semiconductor layer. The buffer layer comprises a first portion comprising Al y Ga z In (1-yz )As and a second portion comprising Ga x In (1-x) P. The first portion is adjacent the first semiconductor layer and the second portion is adjacent the second semiconductor layer.

Anmelder

Firma

The Boeing Company

Land

🇺🇸 USA

Fachgebiete