Lichtemittierende Halbleitervorrichtung

Details

Veröffentlichungs-Nr.

EP2797129

Aktenzeichen

EP14020055

Anmeldetag

23. April 2014

Veröffentlichung

17. Juli 2019

Erteilung

17. Juli 2019

Rechtsraum

EP

IPC

H01L33/58H01L33/38H01L33/40// H01L33/00H01L33/62H01L33/60

Abstract

A semiconductor light emitting apparatus includes semiconductor lamination of n-type layer, active layer, and p-type layer; recess penetrating the lamination from the p-type layer and exposing the n-type layer; n-side electrode formed on the n-type layer at the bottom of the recess and extending upward above the p-type layer; a p-side electrode formed on the p-type layer and having an opening surrounding the recess in plan view, the n-side electrode extending from inside to above the recess; and an insulating layer disposed between the p-side and the n-side electrodes on the p-type layer, the p-side electrode constituting a reflective electrode reflecting light incident from the active layer, the n-side electrode including a reflective electrode layer covering the opening in plan view and reflects light incident from the emission layer side, the reflective electrode layer having peripheral portion overlapping peripheral portion of the p-side electrode in plan view.

Anmelder

Firma

Stanley Electric Co., Ltd.

Land

🇯🇵 Japan

Fachgebiete