Halbleiteranordnung und Verfahren zur Herstellung
Anmelder: General Electric Company 🇺🇸
Details
- Veröffentlichungs-Nr.
- EP2819156
- Aktenzeichen
- EP14174706
- Anmeldetag
- 27. Juni 2014
- Veröffentlichung
- 22. Mai 2019
- Erteilung
- 22. Mai 2019
- Rechtsraum
- EP
- IPC
- H01L21/8252H01L27/02H01L27/06H01L21/8232H01L29/778H01L29/20H01L21/82
Abstract
A monolithically integrated semiconductor assembly (100) is presented. The semiconductor assembly includes a substrate (110) including silicon carbide (SiC), and gallium nitride (GaN) semiconductor device (120) is fabricated on the substrate. The semiconductor assembly further includes at least one transient voltage suppressor (TVS) structure (130) fabricated in or on the substrate, wherein the TVS structure is in electrical contact with the GaN semiconductor device. The TVS structure is configured to operate in a punch-through mode, an avalanche mode, or combinations thereof, when an applied voltage across the GaN semiconductor device is greater than a threshold voltage. Methods of making a monolithically integrated semiconductor assembly are also presented.
Anmelder
- Firma
- General Electric Company
- Land
- 🇺🇸 USA
US-amerikanischer Technologiekonzern mit Sitz in Massachusetts. Historisch aktiv in Energieerzeugung, Luftfahrttriebwerken, Medizintechnik und Industrietechnik über verschiedene Geschäftsbereiche.
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