HF-Vorrichtung und Verfahren mit verbesserter aktiver Belastungsmodulationskapazität
Anmelder: NXP B.V. 🇳🇱
Details
- Veröffentlichungs-Nr.
- EP2830228
- Aktenzeichen
- EP13177543
- Anmeldetag
- 23. Juli 2013
- Veröffentlichung
- 10. Januar 2018
- Erteilung
- 10. Januar 2018
- Rechtsraum
- EP
- IPC
- H04B5/00H04B5/02
Abstract
There is described an RF bidirectional communication device utilizing active load modulation, the device comprising (a) a resonance circuit including an antenna (326), and (b) a control unit (322) for controlling communication of the device, including switching between a transmission mode and a receiving mode, wherein the control unit is adapted to (c) modify a configuration of the resonance circuit such that the resonance circuit has a first resonance frequency (f 0 ) when the device is in the transmission mode and a second resonance frequency (f 0 +f) when the device is in the receiving mode, and (d) modify the configuration of the resonance circuit such that a Q-factor of the resonance circuit is periodically decreased while the device is in the transmission mode. There is also described a corresponding method and a system comprising a RF device and a reader/writer device. Furthermore, there is described a computer program and a computer program product.
Anmelder
- Firma
- NXP B.V.
- Land
- 🇳🇱 Niederlande
Niederländischer Halbleiterhersteller mit Sitz in Eindhoven. Entwickelt Chips und Halbleiterlösungen für Automobiltechnik, Kommunikation, Sicherheit sowie industrielle Anwendungen.
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Fachgebiete
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Schwarzweller, Thomas
NXP Semiconductors Germany GmbH · Hannover