Nichtflüchtige Speicherzelle mit geteiltem Gate

Details

Veröffentlichungs-Nr.

EP2833408

Aktenzeichen

EP14178063

Anmeldetag

22. Juli 2014

Veröffentlichung

12. September 2018

Erteilung

12. September 2018

Rechtsraum

EP

IPC

H01L21/336H01L29/788H01L29/792

Abstract

A method of making a semiconductor structure (100) uses a substrate (102) having a background doping of a first type. A gate structure has a gate dielectric (104) on the substrate and a select gate layer (106) on the gate dielectric. Implanting is performed into a first portion of the substrate adjacent to a first end with dopants of a second type. The implanting is prior to any dopants being implanted into the background doping of the first portion which becomes a first doped region of the second type. An NVM gate structure has a select gate (106), a storage layer having a first portion over the first doped region, and a control gate (208) over the storage layer. Implanting (304) at a non-vertical angle with dopants of the first type forms a deep doped region (306) under the select gate. Implanting with dopants of the second type forms a source/drain extension (404).

Anmelder

Firmen

NXP USA, Inc.
Freescale Semiconductor, Inc.

Land

🇺🇸 USA

Fachgebiete