Verfahren zur Abscheidung von Siliciumnitridfilmen

Details

Veröffentlichungs-Nr.

EP2857552

Aktenzeichen

EP14187603

Anmeldetag

3. Oktober 2014

Veröffentlichung

23. September 2015

Rechtsraum

EP

IPC

C23C16/455C23C16/34C07F7/10C23C16/18

Abstract

Described herein are methods for forming silicon nitride films. In one aspect, there is provided a method of forming a silicon nitride film comprising the steps of: providing a substrate in a reactor; introducing into the reactor an at least one organoaminosilane having a least one SiH<3>group described herein wherein the at least one organoaminosilane reacts on at least a portion of the surface of the substrate to provide a chemisorbed layer; purging the reactor with a purge gas; introducing a plasma comprising nitrogen and/or an inert gas into the reactor to react with at least a portion of the chemisorbed layer and provide at least one reactive site wherein the plasma is generated at a power density ranging from about 0.01 to about 1.5 W/cm<2>.

Anmelder

Firmen

Versum Materials US, LLC
AIR PRODUCTS AND CHEMICALS, INC.

Land

🇺🇸 USA

Fachgebiete