Verfahren zur Bildung von Abstandhaltern eines Gates eines Transistors

Details

Veröffentlichungs-Nr.

EP2876677

Aktenzeichen

EP14194662

Anmeldetag

25. November 2014

Veröffentlichung

18. September 2019

Erteilung

18. September 2019

Rechtsraum

EP

IPC

H01L21/02H01L21/8234H01L29/66H01L29/78H01L21/84H01L29/417

Abstract

The invention describes a method of forming spacers of a gate (120) of a transistor (200) comprising an active layer (146) surmounted by the gate; the invention comprising a step of forming (520) a porous layer (256) covering the gate and having a dielectric constant equal to or lower than that of silicon oxide, a step of forming (530) a protective layer (152) covering the porous layer and the gate, a step of etching (540) the protective layer carried out anisotropically so as to retain residual portions (152a, 152b) of the protective layer only at the flanks of the gate, a modification (550) of the porous layer carried out by penetration of ions within the porous layer to form a modified layer (166), the modification being carried out anisotropically and so as to modify the porous layer over its entire thickness above the gate and above the active layer and so as not to modify the entire thickness of the porous layer located on the flanks of the gate, the latter being protected by the protective spacers and constituting porous spacers (256a, 256b) for the gate, and a step of removing (560) the modified layer using etching, this removal step being carried out so as to leave the protective spacers in place.

Anmelder

Firmen

COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES
COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

Land

🇫🇷 Frankreich

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