Verbesserungen an oder im Zusammenhang mit elektrostatischem Entladungsschutz

Details

Veröffentlichungs-Nr.

EP2889906

Aktenzeichen

EP13199855

Anmeldetag

30. Dezember 2013

Veröffentlichung

20. Februar 2019

Erteilung

20. Februar 2019

Rechtsraum

EP

IPC

H01L27/02H01L29/739// H01L29/78

Abstract

Described herein is an electrostatic discharge (ESD) protection device implemented in finFET technology. The device has a reduced thickness shallow trench isolation (STI) layer (120') which allows migration of high-doped drain implants (240, 250) therethrough to form regions (290, 300) extending under the STI layer (120') thereby creating a planar-like region under the STI layer (120'). The regions (290, 300) are formed in an n-well layer (180) provided between a substrate (100) and the STI layer (120'). The formation of the planar-like region under the STI layer (120') has the advantage that part of the thermal energy produced in the device during an ESD event is generated under the STI layer where it can be more efficiently dissipated towards a substrate (100).

Anmelder

Firma

IMEC vzw

Land

🇧🇪 Belgien

Fachgebiete