Verfahren zur Herstellung von Abstandshaltern eines Gates eines Transistors

Details

Veröffentlichungs-Nr.

EP2975645

Aktenzeichen

EP15176175

Anmeldetag

9. Juli 2015

Veröffentlichung

1. Februar 2017

Erteilung

1. Februar 2017

Rechtsraum

EP

IPC

H01L21/265H01L29/66H01L21/3065H01L21/8238H01L21/8234H01L21/31H01L21/311H01L21/3115H01L29/51H01L29/16

Abstract

The invention describes a method for forming spacers (152a, 152b) of a gate of a field effect transistor, comprising a step of forming a nitride layer (152) covering the gate of said transistor; at least one step of modifying the nitride layer, carried out after the forming step, by placing the nitride layer (152) in the presence of a plasma comprising ions heavier than hydrogen and CxHy to form a modified nitride-based layer (158) and a carbon film (271); the modification step being carried out in such a way that the plasma creates a bombardment of hydrogen-based ions (H) originating from the CxHy in an anisotropic manner in a preferred direction parallel to the sides of the grid and in such a way as to modify only a greater portion of the thickness of the nitride-based layer at the sides of the grid, the anisotropic bombardment of ions heavier than hydrogen allowing the carbon of the CxHy to form a carbonaceous film in particular on surfaces parallel to the direction of the bombardment by preventing the formation of a carbonaceous film on the surfaces of the nitride-based layer which are perpendicular to the direction of the bombardment; at least one step of removing the modified nitride-based layer using selective etching of the modified nitride-based layer with respect to said carbonaceous film and with respect to the unmodified portions (152a, 152b) which constitute the spacers (152a, 152b) for the grid.

Anmelder

Firmen

COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES
COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

Land

🇫🇷 Frankreich

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