Elektrische Verbindungsstruktur für ein Eingebettetes Halbleiterbauelementpaket und Verfahren zur Herstellung davon

Details

Veröffentlichungs-Nr.

EP2988325

Aktenzeichen

EP15181542

Anmeldetag

19. August 2015

Veröffentlichung

7. April 2021

Erteilung

7. April 2021

Rechtsraum

EP

IPC

H01L21/60H01L23/538// H01L25/10H01L23/498H05K1/18

Abstract

An electronics package includes a first dielectric substrate (34) having a first plurality of vias (50) formed through a thickness thereof, a metalized contact layer (48) coupled to a top surface (40) of the first dielectric substrate (34), and a first die (68) positioned within a first die opening (58) formed through the thickness of the first dielectric substrate (34). Metalized interconnects (56) are formed on a bottom surface (54) of the first dielectric substrate (34) and extend through the first plurality of vias (50) to contact the metalized contact layer (48). A second dielectric substrate (64) is coupled to the first dielectric substrate (34) and has a second plurality of vias (82) formed through a thickness thereof. Metalized interconnects (92) extend through the second plurality of vias (82) to contact the first plurality of metalized interconnects (56) and contact pads (49) of the first die (68). A first conductive element electrically (114) couples the first die (68) to the metalized contact layer (48).

Anmelder

Firma

General Electric Company

Land

🇺🇸 USA

Fachgebiete