Verfahren zur Bildung von Chalkogeniddünnfilmschichten

Details

Veröffentlichungs-Nr.

EP2993701

Aktenzeichen

EP15183518

Anmeldetag

2. September 2015

Veröffentlichung

1. November 2017

Erteilung

1. November 2017

Rechtsraum

EP

IPC

H01L31/032H01L21/02

Abstract

A method for forming a ternary or quaternary thin film chalcogenide layer containing Cu and Si is disclosed, the method comprising: depositing a copper layer (11) on a substrate (10); depositing a silicon layer (12) on the copper layer (11), wherein the [Cu]/[Si] atomic ratio is at least 0.7; afterwards performing a first annealing step of the deposited layers in an inert atmosphere, thereby forming a Cu-Si layer (20); and afterwards performing a first selenization step or a first sulfurization step of the annealed layers, thereby forming a ternary thin film chalcogenide layer (30) on the substrate (10). An associated composite structure and a photovoltaic cell are also disclosed.

Anmelder

Firmen

IMEC vzw
King Abdulaziz City for Science and Technology
Katholieke Universiteit Leuven
Universiteit Hasselt

Land

🇧🇪 Belgien

Fachgebiete