Leistungswandlergehäuse mit Integriertem Induktorausgang

Details

Veröffentlichungs-Nr.

EP3007223

Aktenzeichen

EP15185987

Anmeldetag

21. September 2015

Veröffentlichung

10. November 2021

Erteilung

10. November 2021

Rechtsraum

EP

IPC

H01L23/495H01L23/66H02M1/00

Abstract

In one implementation, a semiconductor package includes a first patterned conductive carrier including partially etched segments. The semiconductor package also includes a control FET having a control drain attached to a first partially etched segment of the first patterned conductive carrier. In addition, the semiconductor package includes a sync FET having a sync source and a sync gate attached to respective second and third partially etched segments of the first patterned conductive carrier. The semiconductor package further includes a second patterned conductive carrier having a switch node segment situated over a control source of the control FET and over a sync drain of the sync FET, as well as an inductor coupled between the switch node segment and an output segment of the second patterned conductive carrier.

Anmelder

Firmen

Infineon Technologies Americas Corp.
International Rectifier Corporation

Land

🇺🇸 USA

Fachgebiete