Resistive Schaltspeicherzelle

Details

Veröffentlichungs-Nr.

EP3035399

Aktenzeichen

EP15151313

Anmeldetag

15. Januar 2015

Veröffentlichung

18. November 2020

Erteilung

18. November 2020

Rechtsraum

EP

IPC

H01L45/00G11C13/00H01L27/24

Abstract

A resistive switching memory cell (100) comprises a stack of a first electrode (110), a first inner region (120), a second inner region (130), and a second electrode (140). The first inner region (120) comprises one or more metal oxide layers. The second inner region (130) comprises one or more insulating, semi-insulating or semiconductive layer, wherein the second inner region (130) is in direct contact with the first inner region (120) and can scavenge oxygen from the first inner region (120), and the second inner region (130) has a nonlinear charge carrier dominant conduction mechanism under an applied voltage or electric field.

Anmelder

Firma

IMEC VZW

Land

🇧🇪 Belgien

Fachgebiete