Drucksensor mit Eingebautem Belastungspuffer

Details

Veröffentlichungs-Nr.

EP3118599

Aktenzeichen

EP16173621

Anmeldetag

9. Juni 2016

Veröffentlichung

11. April 2018

Erteilung

11. April 2018

Rechtsraum

EP

IPC

G01L9/00

Abstract

A semiconductor pressure sensor (1) comprising: a semiconductor substrate (2) having a through-opening (3) extending from a top surface (4) to a bottom surface (5) of the substrate (2), the through-opening (3) forming a space between an inner part (12) and an outer part (11) of said substrate; a pressure responsive structure arranged on said inner part (12); a number of flexible elements (7, 13) extending from said inner part (12) to said outer part (11) for suspending the inner part (12) within said through-opening (3); the through-opening being at least partly filled with an anelastic material. A method of producing such a semiconductor pressure sensor.

Anmelder

Firma

Melexis Technologies NV

Land

🇧🇪 Belgien

Fachgebiete