Dünnschichttransistorsubstrat mit Ultrahoher Dichte mit Struktur mit Niedrigem Leitungswiderstand und Verfahren zur Herstellung davon

Details

Veröffentlichungs-Nr.

EP3118675

Aktenzeichen

EP15202913

Anmeldetag

29. Dezember 2015

Veröffentlichung

20. Februar 2019

Erteilung

20. Februar 2019

Rechtsraum

EP

IPC

G02F1/1362H01L27/12

Abstract

A display device is described that has reduced resistance in one or more of the gate, common, data electrical lines (GL, CL, DL) that control the operation of the pixels of the display device. Reduced resistance is achieved by forming additional metal and/or metal-alloy layers (AGL, ACL, ADL) on the gate, common, and/or data lines (GL, CL, DL) in such a manner so that the cross-sectional area of those lines (GL, CL, DL) is increased. As a consequence, each such line is formed so as to be thicker than could otherwise be achieved without causing defects in the rubbing process of an alignment layer. Additionally, no widening of these lines is needed, thus preserving the aspect ratio of the device. The gate insulating and semiconducting layers (GI, SE) that in part make up the thin film transistors (TFT) that help control the operation of the pixels of the device may also be designed to take into account the increased thickness of the lines.

Anmelder

Firma

LG Display Co., Ltd.

Land

🇰🇷 Südkorea

Fachgebiete