Hochspannungstoleranter Ldmos

Details

Veröffentlichungs-Nr.

EP3188248

Aktenzeichen

EP15203221

Anmeldetag

30. Dezember 2015

Veröffentlichung

28. November 2018

Erteilung

28. November 2018

Rechtsraum

EP

IPC

H01L29/78H01L29/06H01L29/08H01L29/10

Abstract

An LDMOS device (300) in FinFET technology comprises a first region (210) substantially surrounded by a second region (220) of different polarity; a first fin (330) in the first region (210), extends into the second region (220), and comprises a doped source region (410) connected with a first local interconnect (380); a second fin (340) in the second region (220), comprises a doped drain region (420) connected with a second local interconnect (382); a third fin (350) parallel with the first and second fin (330) comprises a doped drain region connected with the second local interconnect (382); a gate (360) over the first fin (330) at the border between the first and second regions. In operation a first current path runs over the first and second fins (330, 340), and a second current path runs over the first fin (330) and perpendicular from the first fin towards the third fin (350).

Anmelder

Firma

IMEC VZW

Land

🇧🇪 Belgien

Fachgebiete