Transistor mit Heteroübergang mit Verbessertem Elektronengas-Einschluss

Details

Veröffentlichungs-Nr.

EP3203526

Aktenzeichen

EP17154326

Anmeldetag

2. Februar 2017

Veröffentlichung

25. Mai 2022

Erteilung

25. Mai 2022

Rechtsraum

EP

IPC

H01L29/778H01L29/10// H01L29/20H01L29/207

Abstract

The invention relates to a high electron mobility heterojunction transistor (1), comprising: - a first GaN layer (13); - a second GaN layer (14) with P-type doping on the first layer, including Magnesium as a P-type dopant, with a concentration at least equal to 5 * 10<16>cm<-3>and at most equal to 2 * 10<18>cm<-3>, said second GaN layer (14) having a thickness of between 20 and 50 nm; - a third GaN layer (15) with N-type doping on the second GaN layer to form a depleted p/n junction; - a fourth GaN layer (16) not intentionally doped and on the third GaN layer; - a semiconductor layer (17) directly above the fourth GaN layer not intentionally doped to form an electron gas layer (18).

Anmelder

Firma

Commissariat à l'énergie atomique et aux énergies alternatives

Land

🇫🇷 Frankreich

Fachgebiete