Selbstsperrender Transistor mit Heteroübergang mit Hoher Elektronenbeweglichkeit

Details

Veröffentlichungs-Nr.

EP3203527

Aktenzeichen

EP17154327

Anmeldetag

2. Februar 2017

Veröffentlichung

24. Dezember 2025

Erteilung

24. Dezember 2025

Rechtsraum

EP

IPC

H10D30/47H10D62/17// H10D64/27H10D62/854H10D62/85

Abstract

The invention relates to a normally off type high electron mobility field effect transistor (1), comprising: - a first GaN layer (14) with P-type doping; - a second GaN layer (15) with N-type doping formed on the first GaN layer; - a third GaN layer (16) not intentionally doped and formed on the second GaN layer; - a semiconductor layer (17) formed to form an electron gas layer (18); - a cavity formed through said third GaN layer, without reaching the bottom of the second GaN layer; - a gate (3) including a conductive gate material (31) and a gate insulator layer (32) arranged in said cavity, said gate insulator layer electrically insulating said conductive gate material (31) with respect to said second and third GaN layers.

Anmelder

Firmen

Commissariat à l'Energie Atomique et aux Energies Alternatives
Commissariat à l'énergie atomique et aux énergies alternatives

Land

🇫🇷 Frankreich

Fachgebiete